Home / Semiconductor Electronics / Global GaN Power Device Market Professional Survey Report 2016

Global GaN Power Device Market Professional Survey Report 2016

  • Id : RNR-24335
  • Category : Semiconductor Electronics
  • Publish Date : 13-Oct
  • Pages : 116
  • Format : PDF
License Type

Description
Notes:
Production, means the output of GaN Power Device
Revenue, means the sales value of GaN Power Device

This report studies GaN Power Device in Global market, especially in North America, Europe, China, Japan, Southeast Asia and India, with production, revenue, consumption, import and export in these regions, from 2011 to 2015, and forecast to 2021.

This report focuses on top manufacturers in global market, with production, price, revenue and market share for each manufacturer, covering
    Fujitsu
    Toshiba Corporation
    Koninklijke Philips
    Texas Instruments
    Mitsubishi Chemical
    Azzurro Semiconductors
    Epigan
    Nippon Telegraph & Telephone Advance Technology
    RF Micro Devices
    Cree
    Aixtron
    International Quantum Epitaxy
    Panasonic Corporation

By types, the market can be split into
    Type I
    Type II
    Type III

By Application, the market can be split into
    High-efficiency power supplies
    HEV/EVs
    PV inverters
    Others

By Regions, this report covers (we can add the regions/countries as you want)
    North America
    China
    Europe
    Southeast Asia
    Japan
    India